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| e PTB 20079 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 1.6-1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 16 +24V 14 +26V +22V Output Power (Watts) 12 10 8 6 4 2 0 0.00 2007 9 LOT COD E f = 1.65 GHz ICQ = 100 mA 0.50 1.00 1.50 2.00 Input Power (Watts) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25 C derate by Storage Temperature Range Thermal Resistance (Tflange = 70 C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 1.4 52 0.29 -40 to +150 3.4 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20079 Electrical Characteristics (100% Tested) Characteristic Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain e Conditions IC = 15 mA, RBE = 22 IE = 10 mA IC = 1 A, VCE = 5 V Symbol V(BR)CER V(BR)EBO hFE Min 55 4.0 20 Typ -- -- -- Max -- -- 100 Units Vdc Vdc -- RF Specifications (100% Tested) Characteristic Power Gain, Common-Emitter (VCC = 26 Vdc, POUT = 3 W, ICQ = 120 mA, f = 1.65 GHz) Efficiency (VCC = 26 Vdc, POUT = 10 W, ICQ = 120 mA, f = 1.65 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 120 mA, f = 1.65 GHz) Symbol Gpe Min 10.5 37 10.0 Typ 11 40 12 Max -- -- -- Units dB % Watts C P-1dB Impedance Data (data shown for fixed-tuned broadband circuit) VCC = 26 Vdc, POUT = 10 W, ICQ = 120 mA Z Source Z Load Frequency GHz 1.6 1.65 1.7 R 3.9 3.1 2.3 Z Source jX -4.7 -3.8 -3.7 R 6.1 6.1 6.1 Z Load jX -0.7 0.0 0.7 Z0 = 50 2 5/6/98 e Typical Performance Gain vs. Frequency (as measured in a broadband circuit) PTB 20079 Power-Added Efficiency vs. Pout Power-Added Efficiency (%) 60 50 40 30 20 10 0 13 12 +26 V f = 1.65 GHz ICQ = 100 mA + 26 V + 24 V Gain (dB) 11 10 9 8 1.60 +24 V +22 V VCC + 22 V POUT = 10 W ICQ = 100 mA 1.62 1.64 1.66 1.68 1.70 Frequency (GHz) 0 4 8 12 16 Power Output (Watts) Intermodulation Distortion (dB) 0 -10 3rd Order IMD vs. PEP 800 mA -20 400 mA ICQ -30 -40 -50 -60 0 5 10 15 20 200 mA 100 mA VCC = 24 V f1 = 1650.0 MHz f2 = 1650.2 MHz Output Power (PEP) (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20079 Uen Rev. C 09-28-98 3 |
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